MMBD101
Features
Low Turn-on Voltage
ForUHFmixerapplication
Also suitablefor use in detector and ultra-fast
switching circuitsLow NoiseFigure- 6.0dBTyp@1.0GHz
Very Low Capacitance-LessThan1.0pF@0V
HighForwardConductance-0.5V
(
Typ) @ IF= 10mA
V
Surface Mount Schottky
Barrier Diode
A
L
2
B S
1
3
To p View
G
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
1
2
C
D
3
H
K
J
3
CATHODE
1
ANODE
SOT-23
Dim
Min
Max
A
2.800 3.040
B
1.200 1.400
C
0.890 1.110
D
0.370 0.500
G
1.780 2.040
H
0.013 0.100
J
0.085 0.177
K
0.450 0.600
L
0.890 1.020
S
2.100 2.500
V
0.450 0.600
All Dimension in mm
MAXIMUM RATINGS
MMBD101
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25
o
C
Derate above 25
o
C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBD101 = 4M
ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 10 Ad c)
Diode Capacitance
(VR = 0, f = 1.0 MH )
z
Forward Voltage
(I
F
= 10 mAdc)
Reverse Leakage
(V
R
= 3.0 Vdc)
(T
A
= 25
o
Cunless
otherwise noted)
Symbol
V
(BR)R
C
T
V
F
I
R
Min
7.0
Typ
10
0.88
0.5
0.02
1.0
0.6
0.25
Max
Unit
Volts
pF
Volts
Adc
Symbol
V
R
P
F
TJ
Value
7.0
225
1.8
+150
-55 to +150
Unit
Volts
mW
mW/
C
o
o
o
C
Tstg
C
Characteristic
DAESAN [ DAESAN ELECTRONICS CORP. ]
