欢迎访问ic37.com |
会员登录 免费注册
发布采购

DS1230Y-100 参数 Datasheet PDF下载

DS1230Y-100图片预览
型号: DS1230Y-100
PDF下载: 下载PDF文件 查看货源
内容描述: 256K非易失SRAM [256k Nonvolatile SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 216 K
品牌: DALLAS [ DALLAS SEMICONDUCTOR ]
 浏览型号DS1230Y-100的Datasheet PDF文件第1页浏览型号DS1230Y-100的Datasheet PDF文件第2页浏览型号DS1230Y-100的Datasheet PDF文件第3页浏览型号DS1230Y-100的Datasheet PDF文件第5页浏览型号DS1230Y-100的Datasheet PDF文件第6页浏览型号DS1230Y-100的Datasheet PDF文件第7页浏览型号DS1230Y-100的Datasheet PDF文件第8页浏览型号DS1230Y-100的Datasheet PDF文件第9页  
DS1230Y/AB
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN
TYP
5
5
MAX
10
10
(t
A
=25°C)
UNITS
pF
pF
NOTES
AC ELECTRICAL
CHARACTERISTICS
(V
CC
=5V
±=5%
for DS1230AB)
(t
A
: See Note 10) (V
CC
=5V
±=10%
for DS1230Y)
DS1230AB-100
DS1230Y-100
MIN
100
85
45
85
5
25
30
5
35
100
50
100
MAX
ns
ns
ns
ns
ns
ns
5
5
UNITS
NOTES
DS1230AB-70 DS1230AB-85
DS1230Y-85
PARAMETER SYMBOL DS1230Y-70
MIN MAX MIN MAX
Read Cycle
Time
Access Time
to Output
Valid
OE
CE
t
RC
t
ACC
t
OE
t
CO
t
COE
t
OD
70
70
35
70
5
85
to Output
Valid
or
CE
to
Output Active
OE
Output High Z
from
Deselection
Output Hold
from Address
Change
Write Cycle
Time
Write Pulse
Width
Address Setup
Time
Write Recovery
Time
Output High Z
from
WE
Output Active
from
WE
Data Setup
Time
Data Hold
Time
t
OH
5
5
5
ns
t
WC
t
WP
t
AW
t
WR1
t
WR2
t
ODW
t
OEW
t
DS
t
DH1
t
DH2
70
55
0
5
15
25
5
30
0
10
85
65
0
5
15
30
5
35
0
10
4 of 12
100
75
0
5
15
35
5
40
0
10
ns
ns
ns
ns
ns
ns
ns
ns
12
13
5
5
4
12
13
3