SOT-23 Plastic-Encapsulate Transistors
SOT-23
S9012
TRANSISTOR (PNP)
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
Complementary to S9013
Excellent h
FE
linearity
MARKING: 2T1
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-25
-5
-500
300
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Test
conditions
MIN
-40
-25
-5
-0.1
-0.1
-0.1
120
400
-0.6
-1.2
150
5
V
V
MHz
pF
TYP
MAX
UNIT
V
V
V
I
C
= -100
μ
A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
=-100
μ
A, I
C
=0
V
CB
=-40V, I
E
=0
V
CE
=-20V, I
B
=0
V
EB
= -5V, I
C
=0
V
CE
=-1V, I
C
= -50mA
I
C
=-500mA, I
B
= -50mA
I
C
=-500mA, I
B
= -50mA
V
CE
=-6V,
I
C
= -20mA
μ
A
μ
A
μ
A
f=
30MHz
V
CB
=
-10
V,I
E
=0,f=
1
MHz
CLASSIFICATION OF h
FE
Rank
Range
L
120-200
H
200-350
J
300-400
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
