TO-92
SS8550
TRANSISTOR (
PNP
)
Plastic-Encapsulate Transistors
TO-92
FEATURES
Power dissipation
P
C
: 1 W (T
A
=25
℃
)
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Junction Temperature
Storage Temperature
Value
-40
-25
-5
-1.5
150
-55-150
Units
V
V
V
A
℃
℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Out capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE(on)
Co
b
f
T
Test
conditions
MIN
-40
-25
-5
-0.1
-0.1
-0.1
85
40
-0.5
-1.2
-1
20
100
V
V
V
pF
MHz
400
TYP
MAX
UNIT
V
V
V
μA
μA
uA
I
C
=-100uA, I
E
=0
I
C
=-0.1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-40V, I
E
=0
V
CE
=-20V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
I
C
=-800mA, I
B
=-80mA
I
C
=-800mA, I
B
=-80mA
V
CE
=-1V, I
C
=-10mA
V
CB
=-10V, I
E
=0mA,f=1MH
Z
V
CE
=-10V, I
C
=-50mA,f=-30MH
Z
CLASSIFICATION OF h
FE(2)
Rank
Range
B
85-160
C
120-200
D
160-300
D3
300-400
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
