DC COMPONENTS CO., LTD.
R
BC238
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of audio amplifiers.
TO-92
Pinning
1 = Collector
2 = Base
3 = Emitter
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CES
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
30
25
5
100
350
+150
-55 to +150
Unit
V
V
V
mA
mW
o
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
3 2 1
C
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CES
BV
CEO
BV
EBO
I
CES
(1)
Min
30
25
5
-
-
-
-
-
0.55
180
150
-
2%
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
15
0.2
0.8
1.05
0.83
0.7
800
-
4.5
Unit
V
V
V
nA
V
V
V
V
V
-
MHz
pF
Test Conditions
I
C
=100µA, V
EB
=0
I
C
=2mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=30V, I
E
=0
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
I
C
=2mA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=10mA, V
CE
=5V, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(1)
Base-Emitter On Voltage
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
(1)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
BE(on)
h
FE
f
T
C
ob
380µs, Duty Cycle
Classification of h
FE2
Rank
Range
B
180~460
C
300~800
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