www.din-tek.jp
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
0.3
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
3535
680
400
67
10.5
12.2
1.4
11
10
35
10
2.8
20
20
53
20
ns
Ω
100
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 150 °C
V
DS
≥
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 22 A
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
50
0.0030
0.0046
110
0.005
0.0063
30
1
2.5
± 250
1
50
250
A
Ω
S
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DTU70N03
Drain-Source Body Diode Ratings and Characteristics
T
C
= 25 °C
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 10 A, dI/dt = 100 A/µs
I
F
= 10 A, V
GS
= 0 V
0.83
41
2
40
70
120
1.5
62
3
60
A
V
ns
A
nC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DINTEK [ DinTek Semiconductor Co,.Ltd ]
