TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
2.1
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DTU70N03
1.8
I
S
- Source Current (A)
10
T
J
= 150 °C
V
GS(th)
(V)
1.5
I
D
= 250
µA
T
J
= 25 °C
1
1.2
0.9
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.6
- 50
- 25
0
25
50
75
100
125
150
V
SD
- Source-to-Drain
Voltage
(V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
5000
41
Threshold Voltage
4000
C - Capacitance (pF)
C
iss
V
DS
- Drain-to-Source
Voltage
(V)
39
I
D
= 250
µA
37
3000
2000
C
oss
1000
C
rss
0
0
5
10
15
20
25
30
35
33
- 50
- 25
0
25
50
75
100
125
150
V
DS
- Drain-to-Source
Voltage
(V)
T
J
- Junction Temperature (°C)
Capacitance
1.8
I
D
= 20 A
R
DS(on)
- On-Resistance
1.5
I
D
- Drain Current (A)
(Normalized)
Drain Source Breakdown vs. Junction Temperature
160
120
Package Limited
80
1.2
0.9
V
GS
= 10
V
40
0.6
- 50
V
GS
= 4.5
V
- 25
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
C
- Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
4
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