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2DB1694-7 参数 Datasheet PDF下载

2DB1694-7图片预览
型号: 2DB1694-7
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCE ( SAT) PNP表面贴装晶体管 [LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR]
分类和应用: 晶体小信号双极晶体管开关光电二极管PC
文件页数/大小: 4 页 / 88 K
品牌: DIODES [ DIODES INCORPORATED ]
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2DB1694
Features
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Ideal for Low Power Amplification and Switching
Complementary NPN Type Available (2DD2656)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
C
NEW PRODUCT
B
Top View
E
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-30
-30
-6
-1
-2
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25°C
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
500
250
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
C
obo
f
T
Min
-30
-30
-6
270
Typ
-180
16
300
Max
-0.1
-0.1
-380
680
Unit
V
V
V
μA
μA
mV
pF
MHz
Conditions
I
C
= -10μA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
EB
= -6V, I
C
= 0
I
C
= -500mA, I
B
= -25mA
V
CE
= -2V, I
C
= -100mA
V
CB
= -10V, I
E
= 0,
f = 1MHz
V
CE
= -2V, I
C
= -100mA,
f = 100MHz
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
1.
2.
3.
4.
5.
No purposefully added lead.
Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
2DB1694
Document number: DS31640 Rev. 2 - 2
1 of 4
December 2008
© Diodes Incorporated