2N7002E
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
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Low On-Resistance: R
DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant "Green"
Device (Notes 2 and 4)
Mechanical Data
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Case: SOT-23
Case Material: UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
D
SOT-23
G
S
TOP VIEW
TOP VIEW
Pin Out Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Pulsed
Continuous
V
GSS
I
D
Value
60
60
±20
±40
240
Units
V
V
V
mA
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
≤
1.0MΩ
Gate-Source Voltage
Drain Current
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
J,
T
STG
Value
300
417
-55 to +150
Units
mW
°C/W
°C
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
60
⎯
⎯
1.0
⎯
⎯
0.8
80
⎯
⎯
⎯
⎯
⎯
Typ
70
⎯
⎯
⎯
1.6
2.0
1.0
⎯
22
11
2.0
7.0
11
Max
⎯
1.0
500
±10
2.5
3
4
⎯
⎯
50
25
5.0
20
20
Unit
V
µA
nA
V
Ω
A
mS
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= 10μA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±15V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 250mA
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
@ T
C
= 25°C
@ T
C
= 125°C
@ T
J
= 25°C
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150Ω, V
GEN
= 10V, R
GEN
= 25Ω
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V12 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
2N7002E
Document number: DS30376 Rev. 8 - 2
1 of 4
June 2010
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
