DMC3018LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
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Complementary Pair MOSFET
Low On-Resistance
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N-Channel: 20mΩ @ 10V
32mΩ @ 4.5V
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P-Channel: 45mΩ @ -10V
65mΩ @ -4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.072g (approximate)
NE W PRODUC T
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SOP-8L
D
2
D
1
S2
G2
S1
G1
TOP VIEW
TOP VIEW
D2
D2
D1
D1
G
2
G
1
S
2
N-Channel MOSFET
S
1
P-Channel MOSFET
Maximum Ratings N-CHANNEL
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GSS
T
A
= 25°C
T
A
= 70°C
I
D
I
DM
Value
30
±20
9.1
7.7
32
Unit
V
V
A
A
Maximum Ratings P-CHANNEL
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GSS
T
A
= 25°C
T
A
= 70°C
I
D
I
DM
Value
-30
±20
-6
-5
-21
Unit
V
V
A
A
Thermal Characteristics
Power Dissipation (Note 1)
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Device mounted on FR-4 PCB, on 2oz. Copper pads with R
θ
JA
= 50°C/W
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Repetitive rating, pulse width limited by junction temperature.
DMC3018LSD
Document number: DS31310 Rev. 7 - 2
1 of 6
www.diodes.com
October 2008
© Diodes Incorporated