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FMMT618TA 参数 Datasheet PDF下载

FMMT618TA图片预览
型号: FMMT618TA
PDF下载: 下载PDF文件 查看货源
内容描述: 20V NPN硅低饱和晶体管SOT23 [20V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 8 页 / 181 K
品牌: DIODES [ DIODES INCORPORATED ]
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A Product Line of
Diodes Incorporated
FMMT618
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
20
20
7
2.5
6
500
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
P
D
R
θJA
R
θJA
R
θJL
T
J,
T
STG
Value
625
806
200
155
194
-55 to +150
Unit
mW
mW
°C/W
°C/W
°C/W
°C
6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as note 6, except the device is measured at t
5 sec.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
FMMT618
Document number: DS33111 Rev. 5 - 2
2 of 7
October 2012
© Diodes Incorporated