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MBRD835L 参数 Datasheet PDF下载

MBRD835L图片预览
型号: MBRD835L
PDF下载: 下载PDF文件 查看货源
内容描述: 8A低VF肖特基整流器 [8A LOW VF SCHOTTKY BARRIER RECTIFIER]
分类和应用: 二极管
文件页数/大小: 2 页 / 63 K
品牌: DIODES [ DIODES INCORPORATED ]
 浏览型号MBRD835L的Datasheet PDF文件第2页  
MBRD835L
8A LOW VF SCHOTTKY BARRIER RECTIFIER
Features
NEW PRODUCT
·
·
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
Very Low Forward Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
1
A
P
4
E
G
H
J
DPAK
Dim
A
B
C
D
E
G
H
Min
6.3
¾
0.3
2.1
0.4
1.2
5.3
1.3
1.0
5.1
Max
6.7
10
0.8
2.5
0.6
1.6
5.7
1.8
¾
5.5
2.3 Nominal
B
2
3
Mechanical Data
·
·
·
·
·
Case: DPAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Type Number
Weight: 0.4 grams (approx.)
D
C
PIN 1
PIN 3
M
K
L
PIN 4, BOTTOMSIDE
HEAT SINK
J
K
L
M
P
0.5 Nominal
All Dimensions in mm
Note:
Pins 1 & 3 must be electrically
connected at the printed circuit board.
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Forward Current
@ T
C
= 88°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Typical Thermal Resistance Junction to Case (Note 2)
Typical Thermal Resistance Junction to Ambient (Note 2)
Operating Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
F(AV)
I
FSM
R
qJC
R
qJA
T
j
T
STG
Value
35
25
8
75
6.0
80
-65 to +125
-65 to +150
Unit
V
V
A
A
°C/W
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Peak Reverse Current (Note 1)
Junction Capacitance
Notes:
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
FM
I
RM
C
j
Min
35
¾
¾
¾
¾
¾
Typ
¾
0.48
¾
0.1
¾
600
Max
¾
0.51
0.41
1.4
35
¾
Unit
V
V
mA
pF
Test Condition
I
R
= 1mA
I
F
= 8A, T
S
= 25°C
I
F
= 8A, T
S
= 125°C
T
S
= 25°C, V
R
= 35V
T
S
= 100°C, V
R
= 35V
f = 1.0MHz, V
R
= 4.0V DC
1. Short duration test pulse used to minimize self-heating effect.
2. Mounted on PC board with 14mm
2
(.013mm thick) copper pad areas.
DS30284 Rev. B-2
1 of 2
MBRD835L