MJD32C
PNP SURFACE MOUNT TRANSISTOR
Features
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Epitaxial Planar Die Construction
High Collector-EmitterVoltage
Ideally Suited for Automated Assembly Processes
Ideal for Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
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Case: TO252-3L
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.34 grams (approximate)
COLLECTOR
3
BASE
Top View
4
2
1
EMITTER
Device Schematic
Pin Out Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
-100
-100
-5
-3
-5
-1
Unit
V
V
V
A
A
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Thermal Characteristics
Characteristic
Power Dissipation @T
C
= 25°C
Thermal Resistance, Junction to Case
Power Dissipation @T
A
= 25°C (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JC
P
D
R
θ
JA
T
J
, T
STG
Value
15
8.33
1.5
80
-55 to +150
Unit
W
°C/W
W
°C/W
°C
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
MJD32C
Document number: DS31624 Rev. 3 - 2
1 of 6
May 2010
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
