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MMBD4448H-7-F 参数 Datasheet PDF下载

MMBD4448H-7-F图片预览
型号: MMBD4448H-7-F
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装开关二极管 [SURFACE MOUNT SWITCHING DIODE]
分类和应用: 二极管开关
文件页数/大小: 3 页 / 344 K
品牌: DIODES [ DIODES INCORPORATED ]
 浏览型号MMBD4448H-7-F的Datasheet PDF文件第2页浏览型号MMBD4448H-7-F的Datasheet PDF文件第3页  
Lead-free
MMBD4448H
SURFACE MOUNT SWITCHING DIODE
Features
·
·
·
·
·
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
High Conductance
Lead Free/RoHS Compliant (Note 3)
TOP VIEW
SOT-23
A
Dim
A
B
C
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
B
C
D
E
G
Mechanical Data
·
·
·
·
·
·
·
·
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagram
Marking: KA3 (See Page 3)
Weight: 0.008 grams (approximate)
E
D
G
H
K
J
L
M
H
J
K
L
M
TOP VIEW
a
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
qJA
T
j
, T
STG
Value
100
80
57
500
250
4.0
2.0
350
357
-65 to +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
Min
80
0.62
¾
¾
¾
¾
¾
¾
Max
¾
0.72
0.855
1.0
1.25
100
50
30
25
3.5
4.0
Unit
V
V
nA
mA
mA
nA
pF
ns
Test Condition
I
R
= 2.5mA
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
V
R
= 70V
V
R
= 75V, T
j
= 150°C
V
R
= 25V, T
j
= 150°C
V
R
= 20V
V
R
= 6V, f = 1.0MHz
V
R
= 6V, I
F
= 5mA
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
I
R
C
T
t
rr
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30176 Rev. 6 - 2
1 of 3
www.diodes.com
MMBD4448H
ã
Diodes Incorporated