MMBF170
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
·
·
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
G
E
D
G
H
K
J
L
M
SOT-23
Dim
A
D
TOP VIEW
S
B
C
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
A
B
C
D
E
G
H
J
K
L
M
Mechanical Data
·
·
·
·
·
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K6Z
Weight: 0.008 grams (approx.)
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Pulsed
Continuous
Pulsed
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
MMBF170
60
60
±20
±40
500
800
225
1.80
556
-55 to +150
Units
V
V
V
mA
mW
mW/°C
K/W
°C
Characteristic
Drain-Gate Voltage R
GS
£
1.0MW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Derating above T
A
= 25°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
@ T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
60
¾
¾
0.8
¾
80
¾
¾
¾
¾
¾
Typ
70
¾
¾
2.1
¾
¾
22
11
2.0
¾
¾
Max
¾
1.0
±10
3.0
5.0
¾
40
30
5.0
10
10
Unit
V
µA
nA
V
W
mS
pF
pF
pF
ns
ns
V
DD
= 25V, I
D
= 0.5A,
V
GS
= 10V, R
GEN
= 50W
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= 100mA
V
DS
= 60V, V
GS
= 0V
V
GS
=
±15V,
V
DS
= 0V
V
DS
= V
GS
, I
D
=-250mA
V
GS
= 10V, I
D
= 200mA
V
DS
=10V, I
D
= 0.2A
Note:1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
£
300ms, duty cycle
£
2%.
DS30104 Rev. C-2
1 of 2
MMBF170
DIODES [ DIODES INCORPORATED ]
