MMSTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMSTA92)
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
A
C
SOT-323
Dim
A
B C
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
B
C
D
E
G
M
B
G
E
0.65 Nominal
Mechanical Data
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•
•
•
•
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Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: K3M, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
K
H
H
J
K
L
M
J
D
E
L
C
0°
8°
α
All Dimensions in mm
B
E
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ
JA
T
j
, T
STG
Value
300
300
6.0
200
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
300
300
6.0
⎯
⎯
25
40
40
⎯
⎯
⎯
50
Max
⎯
⎯
⎯
100
100
Unit
V
V
V
nA
nA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 200V, I
E
= 0
V
CE
= 6.0V, I
C
= 0
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 30mA, V
CE
= 10V
I
C
= 20mA, I
B
= 2.0mA
I
C
= 20mA, I
B
= 2.0mA
V
CB
= 20V, f = 1.0MHz, I
E
= 0
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
h
FE
V
CE(SAT)
V
BE(SAT)
C
cb
f
T
⎯
0.5
0.9
3.0
⎯
⎯
V
V
pF
MHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30175 Rev. 10 - 2
1 of 3
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MMSTA42
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DIODES [ DIODES INCORPORATED ]
