UMG4N
DUAL NPN PRE-BIASED TRANSISTOR
Features
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Epitaxial Planar Die Construction
Surface Mount Package Suited for Automated Assembly
Simplifies Circuit Design and Reduces Board Space
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT-353
3
2
1
(3)
R1
(2)
(1)
R1
NEW PRODUCT
Mechanical Data
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Case: SOT-353
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed Over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
4
5
(4)
(5)
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50
50
5
100
Unit
V
V
V
mA
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation @T
A
= 25°C (Note 3)
Thermal Resistance, Junction to Ambient Air @T
A
= 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
j
, T
STG
Value
150
833
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Gain
Gain-Bandwidth Product (Note 4)
Input Resistance
Notes:
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
R
1
Min
50
50
5.0
⎯
⎯
⎯
100
⎯
7
Typ
⎯
⎯
⎯
⎯
⎯
⎯
330
250
10
Max
⎯
⎯
⎯
0.5
0.5
0.3
600
⎯
13
Unit
V
V
V
μA
μA
V
⎯
MHz
kΩ
Test Condition
I
C
= 50μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50μA, I
C
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 10mA, I
B
= 1mA
V
CE
= 5V, I
C
= 1mA
V
CE
= 10V, I
E
= -5mA, f = 100MHz
⎯
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
4. Characteristics of transistor. For reference only.
DS31207 Rev. 3 - 2
1 of 3
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UMG4N
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
