NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ZTX450
ZTX451
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX450
60
45
5
2
1
1
E-Line
TO92 Compatible
ZTX451
80
60
UNIT
V
V
V
A
A
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
100
15
150
15
3-175
60
45
5
0.1
0.1
0.25
1.1
300
50
10
150
15
ZTX450
MIN.
80
60
5
ZTX451
MAX.
V
V
V
µ
A
µ
A
µ
A
UNIT
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=45V
V
CB
=60V
V
EB
=4V
I
C
=150mA, I
B
=15mA*
I
C
=150mA, I
B
=15mA*
I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
MAX. MIN.
0.1
0.1
0.35
1.1
150
V
V
MHz
pF
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
DIODES [ DIODES INCORPORATED ]
