PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 100 Volt V
CEO
* 1 Amp continuous current
* P
tot
=1 Watt
ZTX552
ZTX553
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j:
T
stg
ZTX552
-100
-80
-5
-2
-1
1
5.7
E-Line
TO92 Compatible
ZTX553
-120
-100
UNIT
V
V
V
A
A
W
mW/ °C
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-onn Voltage
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
ZTX552
MIN.
-100
-80
-5
-0.1
-0.1
-0.25
-1.1
-1.0
40
10
150
12
3-196
150
40
10
150
12
MAX.
ZTX553
MIN.
-120
-100
-5
-0.1
-0.1
-0.25
-1.1
-1.0
200
MHz
MHz
MAX.
V
V
V
µ
A
µ
A
UNIT
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA
I
E
=-100
µ
A
V
CB
=-80V
V
CB
=-100V
V
EB
=-4V
I
C
=-150mA, I
B
=-15mA*
I
C
=-150mA, I
B
=-15mA*
I
C
=-150mA, V
CE
=-10V*
I
C
=-150mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
V
V
V
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
DIODES [ DIODES INCORPORATED ]
