NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 2 JUNE 94
FEATURES
* 160 Volt V
CEO
* 1 Amp continuous current
* Gain of 5K at I
C
=1 Amp
* P
tot
= 1 Watt
ZTX600
ZTX601
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX600
160
140
10
4
1
1
5.7
E-Line
TO92 Compatible
ZTX601
180
160
UNIT
V
V
V
A
A
W
mW/ °C
°C
Operating and Storage Temperature Range
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
160
140
10
0.01
10
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
0.75
0.85
1.7
1.5
0.1
10
1.1
1.2
1.9
1.7
3-206
0.75
0.85
1.7
1.5
ZTX600
MIN. TYP.
Collector-Base
V
(BR)CBO
Breakdown Voltage
Collector-Emitter
V
(BR)CEO
Breakdown Voltage
Emitter-Base
V
(BR)EBO
Breakdown Voltage
Collector Cut-Off
Current
I
CBO
180
160
10
ZTX601
MAX. MIN. TYP.
MAX.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
UNIT CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=140V
V
CB
=160V
V
CB
=140V,
T
=
=100°C
V
CB
=160V,
T
=
=100°C
V
EB
=8V
V
CES
=140V
V
CES
=160V
I
C
=0.5A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
IC=1A, V
CE
=5V*
0.01
10
0.1
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
10
1.1
1.2
1.9
1.7
V
V
V
V
DIODES [ DIODES INCORPORATED ]
