PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 25 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
ZTX749
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j:
T
stg
E-Line
TO92 Compatible
VALUE
-35
-25
-5
-6
-2
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
-35
-25
-5
-0.1
-10
-0.1
-0.12
-0.23
-0.9
-0.8
70
100
75
15
200
200
150
50
-0.3
-0.5
-1.25
-1
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
µ
A
CONDITIONS.
I
C
=-100
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
µ
A, I
C
=0
V
CB
=-30V
V
CB
=-30V,
T
amb
=100°C
V
EB
=-4V, I
E
=0
I
C
=1A, I
B
=-100mA*
I
C
=2A, I
B
=-200mA*
I
C
=1A, I
B
=-100mA*
IC=-1A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
CE(sat)
V
BE(sat)
V
BE(on)
V
V
V
V
Static Forward Current h
FE
Transfer Ratio
300
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-254
DIODES [ DIODES INCORPORATED ]
