PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
ZTX756
ZTX757
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX756
-200
-200
-5
-1
-0.5
1
E-Line
TO92 Compatible
ZTX757
-300
-300
UNIT
V
V
V
A
A
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
50
40
30
20
3-265
ZTX756
ZTX757
UNIT
V
V
V
-100
-100
-0.5
-1.0
-1.0
50
40
30
20
MHz
pF
nA
nA
nA
V
V
V
CONDITIONS.
MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
-200
-200
-5
-100
-100
-0.5
-1.0
-1.0
MAX. MIN.
-300
-300
-5
MAX.
I
C
=-100
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
µ
A, I
C
=0
V
CB
=-160V, I
E
=0
V
CB
=-200V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-100mA,
I
B
=-10mA*
I
C
=-100mA,
I
B
=-10mA*
IC=-100mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
DIODES [ DIODES INCORPORATED ]
