NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* 100 Volt V
CEO
* 4 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
* P
tot
=1.2 Watts
ZTX853
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:Tstg
200
100
6
10
4
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
°C
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
R
≤
1K
Ω
I
EBO
V
CE(sat)
14
100
160
960
3-297
MIN.
200
200
100
6
TYP.
300
300
120
8
50
1
50
1
10
50
150
200
1100
MAX.
UNIT
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
CONDITIONS.
I
C
=100
µ
A
IC=1
µ
A, RB
≤
1K
Ω
I
C
=10mA*
I
E
=100
µ
A
V
CB
=150V
V
CB
=150V, T
amb
=100°C
V
CB
=150V
V
CB
=150V, T
amb
=100°C
V
EB
=6V
I
C
=0.1A, I
B
=5mA
I
C
=2A, I
B
=100mA
I
C
=4A, I
B
=400mA*
I
C
=4A, I
B
=400mA*
µ
A
µ
A
V
BE(sat)
DIODES [ DIODES INCORPORATED ]
