PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 JUNE 94
FEATURES
* 4.5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* High gain
* Spice model available
ZTX968
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:T
stg
-15
-12
-6
-20
-4.5
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
°C
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
-50
-100
-220
-930
-830
MIN.
-15
-12
-6
TYP.
-28
-20
-8
-50
-1
-10
-100
-150
-300
-1050
-1000
MAX.
UNIT
V
V
V
nA
nA
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-12V
V
CB
=-12V, T
amb
=100°C
V
EB
=-6V
I
C
=-500mA, I
B
=-5mA*
I
C
=-2A, I
B
=-50mA*
I
C
=-5A, I
B
=-200mA*
I
C
=-5A, I
B
=-200mA*
IC=-5A, V
CE
=-1V*
µ
A
V
BE(sat)
V
BE(on)
3-333
DIODES [ DIODES INCORPORATED ]
