ZXMN6A11Z
60V SOT89 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
( )
0.120 @ V
GS
= 10V
0.180 @ V
GS
= 4.5V
I
D
(A)
3.6
2.9
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT89 package
D
G
S
Applications
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
S
D
D
G
Tape width
(mm)
12
Quantity per
reel
1,000
Ordering information
Device
ZXMN6A11ZTA
Reel size
(inches)
7
Top view
Device marking
11N6
© Zetex Semiconductors plc 2006
DIODES [ DIODES INCORPORATED ]
