A Product Line of
Diodes Incorporated
ZXRE1004
Absolute Maximum Ratings (Voltages to GND Unless Otherwise Stated)
Parameter
Reverse Current
Forward Current
Operating Temperature
Storage Temperature
Rating
30
10
-40 to 85
-55 to 125
Unit
mA
mA
°C
°C
Power Dissipation (TAMB = 25°C)
SOT23
330
mW
Electrical Characteristics (Test conditions: T
= 25°C, unless otherwise specified.)
amb
Tol.
(%)
1
3
Symbol
Parameter
Condition
IR = 100µA
Min.
Typ.
Max.
Unit
1.208
1.183
1.22
1.22
4
1.232
1.257
8
Reverse breakdown voltage
Minimum knee current
Recommended operating current
range
V
VR
IMIN
IR
µA
mA
0.008
20
Average reverse breakdown voltage
temperature coefficient
(*)
20
75
ppm/°C
mV
TC
IR(MIN) to IR(MAX)
ΔVR
ΔIR
IR=8µA to 1mA
Reverse breakdown voltage change
with current
1
10
IR=1mA to 20mA
IR = 1mA
f = 100Hz
Reverse dynamic impedance
Wideband noise voltage
0.2
60
0.6
Ω
ZR
I
AC = 0.1IR
IR=8µA to 100µA
f=10Hz to 10kHz
µV(rms)
EN
Notes:
(*)
(VR(MAX) – VR(MIN)) x 1000000
=
TC
VR x (T(MAX) – T(MIN)
)
Note: VR(MAX) - VR(MIN) is the maximum deviation in reference
voltage measured over the full operating temperature range.
(†)
0.5% SOT23 only
.
2 of 5
www.diodes.com
June 2010
© Diodes Incorporated
ZXRE1004
Document number: DS32172 Rev. 4 - 2
DIODES [ DIODES INCORPORATED ]
