ZXTN25100DG
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Collector-Emitter cut-off
current
Emitter-Base cut-off
current
Collector-Emitter
saturation voltage
Symbol
BV
CBO
BV
CEX
BV
CEO
BV
ECX
BV
ECO
BV
EBO
I
CBO
I
CEX
I
EBO
V
CE(sat)
<1
120
80
215
200
1020
905
300
120
40
450
170
60
10
175
154
8.7
16.4
115
763
158
250
15
Min.
180
180
100
6
6
Typ.
220
220
130
8.2
8.7
Max.
Unit
V
V
V
V
V
Conditions
I
C
= 100μA
I
C
= 100μA, R
BE
< 1kΩ or
-1V < V
BC
< 0.25V
I
C
= 10mA
(*)
I
E
= 100μA, R
BC
< 1kΩ or
0.25V > V
BC
> -0.25V
I
E
= 100μA
I
E
= 100μA
V
CB
=180V
V
CB
=180V, T
amb
=100°C
V
CE
= 100V, R
BE
< 1kΩ or
-1V < V
BE
< 0.25V
V
EB
= 5.6V
I
C
= 0.5A, I
B
= 10mA
(*)
I
C
= 1A, I
B
= 100mA
(*)
I
C
= 2.5A, I
B
= 250mA
(*)
I
C
= 3A, I
B
= 600mA
(*)
I
C
= 3A, I
B
= 600mA
(*)
I
C
= 3A, V
CE
= 2V
(*)
I
C
= 10mA, V
CE
= 2V
(*)
I
C
= 0.5A, V
CE
= 2V
(*)
I
C
= 1A, V
CE
= 2V
(*)
I
C
= 3A, V
CE
= 2V
(*)
MHz
pF
pF
ns
ns
ns
ns
I
C
= 500mA, V
CC
=10V,
I
B1
= -I
B2
= 50mA
I
C
= 50mA, V
CE
= 10V
f = 100MHz
V
EB
= 0.5V, f = 1MHz
(*)
V
CB
= 10V, f = 1MHz
(*)
7
8.3
<1
50
0.5
100
50
170
100
345
500
1100
1000
900
V
nA
μA
nA
nA
mV
mV
mV
mV
mV
mV
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
ibo
C
obo
t
d
t
r
t
s
t
f
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤
300µs; duty cycle
≤
2%.
© Zetex Semiconductors plc 2007
DIODES [ DIODES INCORPORATED ]
