ZXTP25012EZ
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol Min.
Typ.
Max.
Unit Conditions
Collector-Base breakdown BV
voltage
-12
-12
-7
-35
V
V
V
I = -100μA
C
CBO
CEO
EBO
(*)
Collector-Emitter
breakdown voltage
BV
-25
-8.5
<-1
I = -10mA
C
Emitter-Base breakdown
voltage
BV
I = -100μA
E
Collector-Base cut-off
current
I
I
-50
-0.5
nA
μA
V
V
= -12V
= -12V, T
CBO
CB
CB
=100°C
amb
Emitter Base cut-off
current
<-1
-50
nA
V
= -5.6V
EB
EBO
IC = -1A, IB = -100mA(*)
IC = -1A, IB = -10mA(*)
IC = -2A, IB = -40mA(*)
IC = -4.5A, IB = -450mA(*)
Collector-Emitter
saturation voltage
V
-55
-70
mV
mV
mV
mV
CE(sat)
-155
-185
-200
-265
-355
-285
IC = -4.5A, IB = -450mA(*)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
V
V
h
-990
-1100
mV
BE(sat)
BE(on)
(*)
-865
-975
mV
I = -4.5A, V = -2V
C
CE
(*)
500
300
40
800
450
85
1500
I = -10mA, V = -2V
FE
C
CE
(*)
I = -1A, V = -2V
C
CE
(*)
I = -4.5A, V = -2V
C
CE
(*)
15
I = -10A, V = -2V
C
CE
Transition frequency
f
310
MHz I = -50mA, V = -10V
T
C
CE
f = 100MHz
(*)
Input capacitance
C
C
127
250
30
pF
pF
V
V
= -0.5V, f = 1MHz
ibo
EB
CB
(*)
Output capacitance
16.9
= -10V, f = 1MHz
obo
Delay time
Rise time
t
t
t
t
41
62
ns
ns
ns
ns
d
V
= -10V, I = -1A,
= -I = -10mA
B2
CC
C
r
s
f
I
B1
Storage time
Fall time
179
65
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1- December 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
DIODES [ DIODES INCORPORATED ]
