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30CTQ035 参数 Datasheet PDF下载

30CTQ035图片预览
型号: 30CTQ035
PDF下载: 下载PDF文件 查看货源
内容描述: 高温肖特基整流器。共阴极 [High Temperature Schottky Rectifier . Common Cathode]
分类和应用: 整流二极管IOT局域网
文件页数/大小: 2 页 / 138 K
品牌: DIOTEC [ DIOTEC SEMICONDUCTOR ]
 浏览型号30CTQ035的Datasheet PDF文件第2页  
30CTQ035 ... 30CTQ045
30CTQ035 ... 30CTQ045
High Temperature Schottky Rectifier – Common Cathode
Hochtemperatur Schottky Gleichrichterdiode – Gemeinsame Kathode
Version 2013-05-07
10.1
±0.3
Ø 3.8
±0.2
4
8.7
Type
Typ
±0.3
2.8
±0.3
1.2
±0.2
Nominal current
Nennstrom
4
2 x 15 A
35...45 V
TO-220AB
1.8 g
4.5
±0.2
14.9
±0.7
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
3.9
±0.3
1 2 3
±0.3
2.67
0.42
±0.2
13.9
1.3
±0.1
0.8
±0.2
2.54
±0.1
1 2 3
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
±0.1
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
1
)
35
40
45
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
1
)
35
40
45
T
C
= 127°C
T
C
= 127°C
f > 15 Hz
T
A
= 25°C
T
A
= 25°C
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
V
F
[V]
), T
j
= 25°C
I
F
= 5 A
I
F
= 15 A
< 0.62
< 0.62
< 0.62
15 A
)
30 A
)
53 A
)
265 A
1
)
351 A
2
s
1
)
-50...+175°C
-50...+175°C
< 0.52
< 0.52
< 0.52
I
FAV
I
FAV
I
FRM
I
FSM
i
2
t
30CTQ035
30CTQ040
30CTQ045
Max. average forward current,
Dauergrenzstrom
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
S
T
j
1
2
3
4
Per diode – Pro Diode
50% Duty Cycle, Rectangular waveform - 50% Duty Cycle, Rechteckwellenform
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
Max. temperature of the case T
C
= 100°C – Max. Temperatur des Gehäuses T
C
= 100°C
http://www.diotec.com/
© Diotec Semiconductor AG
1