General Purpose Transistors
Characteristics (T
j
= 25
/
C)
Min.
Base saturation voltage – Basis-Sättigungsspannung
1
)
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
BCW 60B
V
CE
= 5 V, I
C
= 10
:
A
BCW 60C
BCW 60D
BCW 60B
V
CE
= 5 V, I
C
= 2 mA
BCW 60C
BCW 60D
BCW 60B
V
CE
= 1 V, I
C
= 50 mA
BCW 60C
BCW 60D
Base-Emitter voltage – Basis-Emitter-Spannung
1
)
V
CE
= 5 V, I
C
= 10
:
A
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 1 V, I
C
= 50 mA
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
Noise figure – Rauschzahl
V
CE
= 5 V, I
C
= 200
:
A, R
G
= 2 k
S
,
f = 1 kHz,
)
f = 200 Hz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking – Stempelung
BCW 60B = AB
F
–
R
thA
2 dB
f
T
C
CB0
C
EB0
100 MHz
–
–
250 MHz
1.7 pF
11 pF
V
BEon
V
BEon
V
BEon
–
550 mV
–
520 mV
650 mV
780 mV
V
BEsat
V
BEsat
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
600 mV
700 mV
20
40
100
180
250
380
70
90
100
–
–
–
–
–
–
–
–
–
–
–
BCW 60
Kennwerte (T
j
= 25
/
C)
Typ.
Max.
850 mV
1050 mV
–
–
–
310
460
630
–
–
–
–
700 mV
–
–
–
–
DC current gain – Kollektor-Basis-Stromverhältnis
1
)
Collector-Base Capacitance – Kollektor-Basis-Kapazität
Emitter-Base Capacitance – Emitter-Basis-Kapazität
6 dB
420 K/W
2
)
BCW 61 series
BCW 60C = AC
BCW 60D = AD
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
39
DIOTEC [ DIOTEC SEMICONDUCTOR ]
