BSR 13, BSR 14
NPN
Switching Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
2.9
±0.1
0.4
3
250 mW
SOT-23
(TO-236)
0.01 g
1.1
Plastic case
Kunststoffgehäuse
1.3
±0.1
Type
Code
1
2
2.5
max
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.9
Dimensions / Maße in mm
1=B
2=E
3=C
Maximum ratings (T
A
= 25
/
C)
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
I
BM
T
j
T
S
Grenzwerte (T
A
= 25
/
C)
BSR 13
30 V
60 V
5V
250 mW
1
)
800 mA
800 mA
200 mA
150
/
C
- 65…+ 150
/
C
BSR 14
40 V
75 V
6V
Characteristics (T
j
= 25
/
C)
Min.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, V
CB
= 50 V
I
E
= 0, V
CB
= 50 V, T
j
= 150
/
C
I
E
= 0, V
CB
= 60 V
I
E
= 0, V
CB
= 60 V, T
j
= 150
/
C
BSR 13
BSR 14
I
CB0
I
CB0
I
CB0
I
CB0
I
EB0
I
EB0
–
–
–
–
–
–
Kennwerte (T
j
= 25
/
C)
Typ.
–
–
–
–
–
–
Max.
30 nA
10
:
A
10 nA
10
:
A
30 nA
10 nA
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, V
EB
= 5 V
BSR 13
BSR 14
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
6
DIOTEC [ DIOTEC SEMICONDUCTOR ]
