DB3 ... DB4
DB3 ... DB4
Bidirectional Si-Trigger-Diodes (DIAC)
Bidirektionale Si-Triggerdioden (DIAC)
Version 2006-04-27
Breakover voltage
Durchbruchspannung
Ø
1.9
28 ... 45 V
±2A
DO-35
SOD-27
0.13 g
Peak pulse current
Max. Triggerimpuls
Glass case
Glas-Gehäuse
Weight approx.
Gewicht ca.
62.5
3.9
Type
Ø
0.52
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions - Maße [mm]
Maximum ratings
Power dissipation
Verlustleistung
Peak pulse current (120 Hz pulse repetition rate)
Max. Triggerstrom (120 Hz Puls-Wiederholrate)
Operating Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
A
= 50°C
t
p
≤
10 µs
P
tot
I
PM
T
j
T
S
Grenzwerte
150 mW
1
)
± 2 A
1
)
-50...+100°C
-50...+175°C
Characteristics
Breakover voltage
Durchbruchspannung
Breakover current – Durchbruchstrom
Asymmetry of breakover voltage
Unsymmetrie der Durchbruchspannung
Foldback voltage – Spannungs-Rücksprung
ΔI
= I
BO
to/auf I
F
= 10 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
dV/dt = 10 V/µs
DB3
DB4
V = 98% V
BO
|V
(BO)F
– V
(BO)R
|
dV/dt = 10 V/µs
V
BO
V
BO
I
BO
ΔV
BO
ΔV
F/R
R
thA
Kennwerte
28 ... 36 V
35 ... 45 V
< 200 µA
< 3.8 V
>5V
< 300 K/W
1
)
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
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1
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