欢迎访问ic37.com |
会员登录 免费注册
发布采购

TIP125 参数 Datasheet PDF下载

TIP125图片预览
型号: TIP125
PDF下载: 下载PDF文件 查看货源
内容描述: 硅外延PlanarTransistors [Si-Epitaxial PlanarTransistors]
分类和应用: 晶体晶体管功率双极晶体管局域网
文件页数/大小: 2 页 / 50 K
品牌: DIOTEC [ DIOTEC SEMICONDUCTOR ]
 浏览型号TIP125的Datasheet PDF文件第2页  
TIP125, TIP126, TIP127
PNP
Version 2004-07-01
Darlington Transistors
Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren
PNP
Collector current – Kollektorstrom
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1 = B1
2 = C2
3 = E2
5A
TO-220AB
2.2 g
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25°C)
TIP125
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
B open
E open
C open
- V
CE0
- V
CB0
- V
EB0
P
tot
P
tot
- I
C
- I
B
T
j
T
S
60 V
60 V
Grenzwerte (T
A
= 25°C)
TIP126
80 V
80 V
50 V
2 W
1
)
65 W
5A
8A
120 mA
- 65…+ 150°C
- 65…+ 150°C
TIP127
100 V
100 V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
T
C
= 25°C
Collector current – Kollektorstrom (dc)
Base current – Basisstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Peak Collector current – Kollektor-Spitzenstrom - I
CM
Characteristics (T
j
= 25°C)
Min.
Collector-Emitter cutoff current – Kollektorreststrom
I
B
= 0, - V
CE
= 30 V
I
B
= 0, - V
CE
= 40 V
I
B
= 0, - V
CE
= 50 V
I
E
= 0, - V
CB
= 60 V
I
E
= 0, - V
CB
= 80 V
I
E
= 0, - V
CB
= 100 V
1
Kennwerte (T
j
= 25°C)
Typ.
Max.
500 nA
500 nA
500 nA
200 nA
200 nA
200 nA
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
- I
CE0
- I
CE0
- I
CE0
- I
CB0
- I
CB0
- I
CB0
Collector-Base cutoff current – Kollektorreststrom
) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
1