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6A10 参数 Datasheet PDF下载

6A10图片预览
型号: 6A10
PDF下载: 下载PDF文件 查看货源
内容描述: 硅整流二极管 [SILICON RECTIFIER DIODES]
分类和应用: 整流二极管
文件页数/大小: 2 页 / 49 K
品牌: EIC [ EIC DISCRETE SEMICONDUCTORS ]
 浏览型号6A10的Datasheet PDF文件第2页  
6A05 - 6A10
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
SILICON RECTIFIER DIODES
D6
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
MECHANICAL DATA :
* Case : Void-free molded plastic body
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.1 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 60
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at I
F
= 6 A
Maximum DC Reverse Current
at rated DC Blocking Voltage
Typical Thermal Resistance (1)
Junction Temperature Range
Storage Temperature Range
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
0.95
5.0
1.0
150
20
- 50 to + 150
- 50 to + 150
6A05
6A1
6A2
6A4
6A6
6A8
6A10
UNIT
V
V
V
A
A
50
35
50
100
70
100
200
140
200
400
280
400
6.0
400
600
420
600
800
560
800
1000
700
1000
1.0
V
µA
mA
pF
°C/W
°C
°C
Typical junction capacitance at 4.0V, 1MHz
Note :
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
P.C.B. mounted with 1.1” x 1.1” (30 x 30mm) copper pads
Page 1 of 2
Rev. 02 : March 25, 2005