Certificate TH97/10561QM
Certificate TW00/17276EM
BAS19,BAS20,BAS21
PRV : 120 - 250 Volts
I
O
: 200 mA
FEATURES :
* Small plastic SMD package
* Switching speed: max. 50 ns
* General application
* Continuous reverse voltage: max. 100V, 150V, 200V
* Repetitive peak reverse voltage: max. 120V, 200V, 250V
* Pb / RoHS Free
HIGH VOLTAGE
SWITCHING DIODES
SOT-23
1.40
0.95
0.50
0.35
0.19
0.08
1
3.10
2.70
1.65
1.20
3.0
2.2
1.02
0.89
3
2
0.100
0.013
2.04
1.78
3
MECHANICAL DATA :
* Case :
* BAS19
* BAS20
* BAS21
SOT-23 plastic Case
Marking Code: HA
Marking Code: HB
Marking Code: HC
1
2
bottom view
Dimensions in millimeters
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current (Note 1)
Maximum Non-repetitive Peak Forward Current
(square wave; Tj = 25 °C prior to surge)
Total Power Dissipation (Note 1)
Thermal Resistance Junction to Tie-point
Thermal Resistance Junction to Ambient
Junction Temperature Range
Storage Temperature Range
(Ta = 25 °C unless otherwise specified)
Symbol
V
RRM
V
R
I
F
t = 1 µs
t = 100 µs
t = 10 ms
I
FSM
P
tot
R
th j-tp
R
th j-a
T
J
T
STG
(Tj = 25 °C unless otherwise specified.
BAS19
120
100
BAS20
200
150
200
9
3
1.7
250
330
500
150
-65 to +150
BAS21
250
200
Unit
V
V
mA
A
mW
K/W
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
Parameter
Forward Voltage
Reverse Current
Capacitance
Reverse Recovery Time
Test Condition
I
F
= 100 mA
I
F
= 200 mA
V
R
= V
Rmax
V
R
= V
Rmax
, Tj = 150 °C
V
R
= 0 V, f = 1 MHz
I
F
= 30 mA to I
R
= 30mA,
R
L
=100
Ω,measure
at I
R
=3 mA
Symbol
V
F
I
R
C
D
Trr
BAS19
BAS20
1.00
1.25
100
100
5
50
BAS21
Unit
V
nA
µA
pF
ns
Note :
(1) Device mounted on an FR4 printed circuit board.
Page 1 of 2
Rev. 01 : May 22, 2006
EIC [ EIC DISCRETE SEMICONDUCTORS ]
