GF1A - GF1M
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
Glass passivated chip
High current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
SMA (DO-214AC)
1.1
±
0.3
5.0
±
0.15
4.5
±
0.15
1.2
±
0.2
2.6
±
0.15
2.1
±
0.2
0.2
±
0.07
2.0
±
0.2
MECHANICAL DATA :
*
*
*
*
*
*
Case : SMA Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.067 gram
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 75
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.0 Amp.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
GF1A GF1B GF1D GF1G GF1J GF1K GF1M
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
Trr
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.0
5.0
50
2.0
8
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
μA
μA
μs
pF
°C
°C
Typical Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance (Note2)
Junction Temperature Range
Storage Temperature Range
Notes :
C
J
T
J
T
STG
- 65 to + 150
- 65 to + 150
(1) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 03 : October 14, 2005
EIC [ EIC DISCRETE SEMICONDUCTORS ]
