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KBL410G 参数 Datasheet PDF下载

KBL410G图片预览
型号: KBL410G
PDF下载: 下载PDF文件 查看货源
内容描述: 玻璃钝化 [GLASS PASSIVATED]
分类和应用: 整流二极管桥式整流二极管
文件页数/大小: 2 页 / 54 K
品牌: EIC [ EIC DISCRETE SEMICONDUCTORS ]
 浏览型号KBL410G的Datasheet PDF文件第1页  
RATING AND CHARACTERISTIC CURVES ( KBL400G - KBL410G )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
4.0
200
Mounted on
3" X 3" X 0.11" THK
( 7.5cm X 7.5cm X 0.3cm )
Cu. plate.
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
175
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
3.0
2.0
1.0
60 Hz, Resistive or inductive load.
0
PEAK FORWARD SURGE
CURRENT, AMPERES
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
1
2
4
6
10
20
40
60
100
AMBIENT TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
Pulse Width = 300
µs
1 % Duty Cycle
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
100
FORWARD CURRENT, AMPERES
T
J
= 125
°C
10
10
1.0
1
T
J
= 25
°C
T
J
= 25
°C
0.1
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
06
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005