RBV401 - RBV406
PRV : 100 - 600 Volts
Io : 4.0 Amperes
FEATURES :
*
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
Very good heat dissipation
Pb / RoHS Free
SILICON BRIDGE RECTIFIERS
RBV4
C3
0.134(3.4)
0.122(3.1)
0.075 (1.9)
0.060 (1.5)
0.996 (25.3)
0.972 (24.7)
0.150 (3.8)
0.134 (3.4)
0.189 (4.8)
0.173 (4.4)
0.603(15.3)
0.579(14.7)
+
~ ~
0.130(3.7)
0.146(3.3)
0.383(9.7)
0.367(9.3)
0.043 (1.1)
0.035 (0.9)
0.303 (7.7)
0.287 (7.3)
0.114 (2.9)
0.098 (2.5)
0.032 (0.8)
0.043 (1.1)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams
Dimensions in inches and (millimeters)
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Rectified Current Tc=50°C
Maximum Peak Forward Surge Current
0.709 (18)
0.669 (17)
SYMBOL RBV401 RBV402 RBV404 RBV406
V
RRM
V
R
I
F(AV)
I
FSM
100
100
200
200
4.0
80
1.05
10
100
5.0
- 40 to + 150
- 40 to + 150
1.1
400
400
600
600
UNIT
V
V
A
A
V
µA
µA
°C/W
°C
°C
( 50 Hz, Half-cycle, Sinwave, Single Shot )
Maximum Forward Voltage per Diode at I
F
= 2.0 A
Maximum Reverse Current at Reverse Voltage
Maximum Reverse Current at Reverse Voltage Ta = 100
°C
Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature Range
Page 1 of 2
V
F
I
R
I
R(H)
RθJC
T
J
T
STG
Rev. 03 : September 9, 2005
EIC [ EIC DISCRETE SEMICONDUCTORS ]
