RD2.0E ~ RD39E
V
Z
: 2.0 - 39 Volts
P
D
: 500 mW
SILICON ZENER DIODES
DO - 35
0.079(2.0 )max.
1.00 (25.4)
min.
FEATURES :
* Complete 2.0 to 39 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
0.150 (3.8)
max.
0.020 (0.52)max.
1.00 (25.4)
min.
MECHANICAL DATA
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified
Rating
Power Dissipation
Forward Current
Junction Temperature Range
Storage Temperature Range
Symbol
P
D
I
F
T
j
T
s
Value
500
200
- 55 to + 175
- 55 to + 175
Unit
mW
mA
°C
°C
Derating Curve
700
Power Dissipation , P
D
(mW)
600
500
400
300
200
100
0
0
25
50
75
100 125
150 175 200
Ambient Temperture , Ta (
°
C)
Page 1 of 4
Rev. 02 : March 25, 2005
EIC [ EIC DISCRETE SEMICONDUCTORS ]
