RH1 - RH1C
PRV : 400 - 1000 Volts
Io : 0.6 Ampere
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
FAST RECOVERY
RECTIFIER DIODES
D2
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Peak Reverse Voltage
Maximum Peak Reverse Surge Voltage
Maximum Average Forward Current
,Ta = 50°C
SYMBOL
V
RRM
V
RSM
I
F(AV)
RH1
400
450
RH1A RH1B RH1C
600
650
0.6
800
850
1000
1050
UNIT
V
V
A
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sine wave, Single Shot )
Maximum Forward Voltage at I
F
= 0.6 A
Maximum Reverse Current at V
R
= V
RM
Maximum Reverse Current at V
R
= V
RM
Ta = 25
°C
Ta = 150
°C
I
FSM
V
F
I
R
I
R(H)
Trr
T
J
T
STG
35
1.3
5.0
70
4.0
- 40 to + 150
- 40 to + 150
A
V
µA
µA
µs
°C
°C
Maximum Reverse Recovery Time (Note 1)
Junction Temperature Range
Storage Temperature Range
Note :
( 1 ) Reverse Recovery Test Conditions : I
F
= 10 mA, I
RP
= 10 mA.
Page 1 of 2
Rev. 02 : March 25, 2005
EIC [ EIC DISCRETE SEMICONDUCTORS ]
