ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( SMBJ5.0 - SMBJ170A )
FIG.1 - PULSE DERATING CURVE
120
FIG.2 - MAXIMUM NON-REPETITIVE
PERK FORWARD SURGE CURRENT
T
J
= T
J
max
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT
100
PEAK FORWARD SURGE
CURRENT, AMPERES
0
25
50
75
100
125
150
175
200
100
80
60
50
40
20
0
10
1
2
4
6
10
20
40
60
100
Ta, AMBIENT TEMPERATURE, (
?
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL JUNCTION CAPACITANCE
6,000
100
FIG.4 - PEAK PULSE POWER RATING CURVE
C
J
, CAPACITANCE, pF
1,000
V
R
Measured @
Stand-off
voltage
100
T
J
= 25?C
f = 1.0 MHz
Vsig = 50 mV
P-P
10
1
2
10
20
V
R
Measured @
Zero Basic (0V)
P
P
,PEAK POWER (kW)
NON-REPETITIVE PULSE
WAVEFORM SHOWN IN
FIG. 5 Ta=25?C
10
1.0
0.1
0.1µs
100
200
1.0µs
10µs
100µs
1.0ms
10ms
tp, PULSE WIDTH, SEC
V
R
, REVERSE STAND OFF VOLTAGE,VOLTS
FIG.5 - PULSE WAVEFORM
I
PPM
, PEAK PULSE CURRENT, %
tr
?
10µs
100
Peak Value
I
PPM
Ta=25
?C
Pulse Width (tp) is defined
as that point where the peak
current decays to 50%
of I
PPM
50
Half Value - I
PPM
2
td
0
0
1.0
2.0
3.0
4.0
t, TIME(ms)
EIC [ EIC DISCRETE SEMICONDUCTORS ]
