30
10V
4V
4.5V
6V
20
30
25
20
V
ds
=5V
125°C
Id (A)
Id(A)
10
V
gs
=3.5V
15
10
25°C
5
0
0
1
2
3
4
5
V
ds
(Volts)
Fig 1: On-Region Characteristics
0
1.5
2
2.5
3
3.5
4
Vgs(Volts)
Figure 2: Transfer Characteristics
2.2
Vgs=4.5V
22
Normalized On-Resistance
2
1.8
1.6
1.4
1.2
1
0.8
20
V
gs
=10V
I
d
=8.2A
Rds
(on)
(m
:
)
18
V
gs
=10V
16
V
gs
=4.5V
I
d
=7.6A
14
0
5
10
15
20
I
d
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
50
Id=8.2A
40
125°C
1.0E+01
1.0E+00
125°C
1.0E-01
R
ds(on)
(m
:
)
Is (A)
30
25°C
20
1.0E-02
25°C
1.0E-03
1.0E-04
10
2
4
6
8
10
V
gs
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
sd
(Volts)
Figure 6: Body-Diode Characteristics
ELM-TECH [ ELM Technology Corporation ]
