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EDS1232AATA-60 参数 Datasheet PDF下载

EDS1232AATA-60图片预览
型号: EDS1232AATA-60
PDF下载: 下载PDF文件 查看货源
内容描述: 128M位的SDRAM (4M字× 32位)的 [128M bits SDRAM (4M words x 32 bits)]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 53 页 / 565 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS1232AATA
Relationship Between Frequency and Minimum Latency
Parameter
Frequency (MHz)
tCK (ns)
Active command to column command
(same bank)
Active command to active command
(same bank)
Active command to precharge command
(same bank)
Precharge command to active command
(same bank)
Write recovery or data-in to precharge
command (same bank)
Active command to active command
(different bank)
Self refresh exit time
Last data in to active command
(Auto precharge, same bank)
Self refresh exit to command input
Symbol
lRCD
lRC
lRAS
lRP
lDPL
lRRD
lSREX
lDAL
lSEC
-60
166
6
3
10
7
3
2
2
1
5
10
3
1
–2
1
0
0
2
1
2
0
1
133
7.5
2
8
6
2
2
2
1
4
8
2
3
1
–1
–2
1
0
0
2
1
2
0
1
-75
133
7.5
3
9
6
3
2
2
1
5
9
3
1
–2
1
0
0
2
1
2
0
1
100
10
2
7
5
2
2
2
1
4
7
2
3
1
–1
–2
1
0
0
2
1
2
0
1
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
Notes
1
1
1
1
1
1
2
= [lDPL +
lRP]
= [lRC]
3
Precharge command to high impedance
lHZP
(CL = 2)
(CL = 3)
Last data out to active command
(Auto precharge, same bank)
Last data out to precharge
(early precharge)
(CL = 2)
(CL = 3)
Column command to column command
Write command to data in latency
DQM to data in
DQM to data out
CKE to CLK disable
Register set to active command
/CS to command disable
Power down exit to command input
lHZP
lAPR
lEP
lEP
lCCD
lWCD
lDID
lDOD
lCLE
lMRD
lCDD
lPEC
Notes: 1.
lRCD
to
lRRD
are recommended value.
2. Be valid [DESL] or [NOP] at next command of self refresh exit.
3. Except [DESL] and [NOP]
Data Sheet E0386E40 (Ver. 4.0)
8