merging Memory & Logic Solutions Inc.
DATA RETENTION CHARACTERISTICS
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
NOTES
EM611FV16U Series
Low Power, 64Kx16 SRAM
Symbol
V
DR
I
DR
t
SDR
t
RDR
Test Condition
I
SB1
Test Condition
(Chip Disabled)
1)
Min
1.5
-
0
Typ
2)
-
0.25
-
-
Max
3.6
-
-
Unit
V
µA
V
CC
=1.5V, I
SB1
Test Condition
(Chip Disabled)
1)
See data retention wave form
ns
t
RC
-
1. See the I
S B 1
measurement condition of datasheet page 4.
2.Typical values are measured at T
A
=
25
o
C and not 100% tested.
DATA RETENTION WAVE FORM
t
SDR
V
cc
2.7V
Data Retention Mode
t
RDR
2.2V
V
DR
CS > Vcc-0.2V
CS
GND
9