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EM6354XSP5B-1.3 参数 Datasheet PDF下载

EM6354XSP5B-1.3图片预览
型号: EM6354XSP5B-1.3
PDF下载: 下载PDF文件 查看货源
内容描述: 复位电路,延时可调 [Reset Circuit with Adjustable Delay]
分类和应用: 复位电路
文件页数/大小: 7 页 / 401 K
品牌: EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
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EM6354
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Voltage at V
DD
to GND
V
DD
-0.3V to +6V
Minimum voltage at any signal
GND - 0.3V
V
MIN
pin
Maximum voltage at any signal
V
MAX
V
DD
+ 0.3V
pin
Electrostatic discharge max. to
MIL-STD-883C method 3015.7
2000V
V
ESD
with ref. to V
SS
Max. soldering conditions
T
MAX
250°C x 10s
Storage Temperature Range
T
STG
-65°C to +150°C
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
all terminal voltages are kept within the voltage range.
Unused inputs must always be tied to a defined logic
voltage level.
Operating Conditions
Parameter
Supply voltage (note 1)
Operating Temperature
Symbol Min Max Unit
V
DD
0.8 5.5
V
T
A
-40 +125 °C
Electrical Characteristics
Unless otherwise specified: V
DD
= 0.8V to 5.5V, T
A
=+25°C (note 1).
Parameter
Symbol
Conditions
+25°C
V
DD
=1.5V
-40°C to +125°C
Supply current (note 2)
I
DD
V
DD
=3.3V
V
DD
=5.0V
+25°C
-40°C to +125°C
+25°C
-40°C to +125°C
Min
-
-
-
-
-
-
1.290
1.359
1.546
1.635
1.773
2.167
2.591
2.886
3.034
4.334
4.561
Typ
2.3
2.9
3.4
1.31
1.38
1.57
1.66
1.80
2.20
2.63
2.93
3.08
4.40
4.63
Max
4.6
7
5.5
8.3
6.3
9.6
1.330
1.401
1.594
1.685
1.827
2.233
2.669
2.974
3.126
4.466
4.699
Unit
µ
A
EM6354 – 1.3
EM6354 – 1.4
EM6354 – 1.6
EM6354 – 1.7
Threshold voltage
(note 3)
EM6354 – 1.8
V
TH
EM6354 – 2.2
EM6354 – 2.6
EM6354 – 2.9
EM6354 – 3.1
EM6354 – 4.4
EM6354 – 4.6
V
Threshold voltage
V
TH
temperature coefficient
-
ppm/°C
T
A
= -40°C to +125°C
-
±
50
T
A
(note 4)
Threshold hysteresis
V
HYS
-
2.1%
V
TH
-
V
Note 1:
Production tested at +25°C only. Over temperature limits are guaranteed by design, not production tested.
V
DD
min=0.9V for active-high versions (EM6354Z).
Note 2:
RESET
(RESET)
open.
Note 3:
Threshold voltage is specified for V
DD
falling.
Note 4:
Typical variation
∆V
TH
of V
TH
at a given temperature T
A
is calculated as follows:
V
TH
(T
=
T
A
)
=
V
TH
×
V
TH
×
T
A
25
°
C
T
A
Example:
-6
for version V
TH
=2.93V, variation at T
A
=70°C is equal to
∆V
TH
(70°C)=±50
10 x 2.93 x (70-25)=±6.59mV
Copyright
©
2006, EM Microelectronic-Marin SA
03/06 – rev.I
3
www.emmicroelectronic.com