Absolute Maximum Ratings
Reverse Voltage VR
Operating Ratings
Reverse Voltage VR
30.0 V
+1.5V to +20V
HBM class 2 (<2kV)
-40°C to +85°C
5% to 95%
Breakdown Voltage between Diodes
Storage temperature (TA)
10.0 V
ESD rating of JEDEC
-40°C to +85°C
+260°C
Operating temperature (TA)
Humidity, non-condensing
Soldering Lead Temperature (TL), 4 sec
Note 1: Information only. Refer to the datasheet epc3xx for detailed and valid technical specifications.
Note 2: Unless otherwise stated, data apply for individual photodiodes @ V R = 5.0 V, -40°C < TA < +85°C, RL = 50 Ω.
General Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Unit
nm
nm
A/W
%
λS max.
Wavelength @ max. Sensitivity
850
λ
Wavelength Range: S = 20 % to Smax
400
1050
Sλ
η
Spectral Sensitivity @ λ = 850nm, VR = 5V, Ie = 1 mW/cm2, type epc300
Quantum Efficiency @ λ = 850nm, VR = 5V, Ie = 1 mW/cm2, type epc300
0.6
90
Type Specific Characteristics @ +25°C (all diodes of the array connected in parallel)
Symbol
Parameter
Type
Min.
Typ.
2.5
5
Max.
Unit
IP
Photo Current
per diode
epc300
μA
@ VR = 5V, Ie = 1 mW/cm2, λ = 850 nm
epc330
40
IR
Dark Current
@ VR = 5 V, TA= 20°C
per diode
epc300
20
250
500
pA
μA
ns
40
epc330
320
2.5
5
4000
ISC
Short-circuit Current
@ e = 1 mW/cm2
per diode
epc300
epc330
40
tr
Rise/Fall Time; all types
@ RL = 50 Ω , λ = 850 nm, IP = 200 μA
VR = +1.5 V
VR = +5.0 V
VR = +10.0 V
epc330
300
150
90
CT
Cross Talk Suppression
50
dB
between individual photo diodes on the same chip, if the
voltage difference Vdiff is <100mV between individual
diodes (cathodes)
1.00
2.00
21
28
29
27
26
25
24
23
22
20
30
31
32
19
18
17
16
15
14
13
epc330
Pin1
epc300
epc300
1
Pin1
epc330
2
3
4
1
2
4
3
1.00
1.30
5
6
7
8
9
10
11
12
1.00
4.78 ±0.1
1.00
1.30
2.54
2.40
22.86 ±0.1
Figure 3: Dimensions epc300-LCC4
Figure 4: Dimensions epc330-LCC32
© 2012 ESPROS Photonics Corporation
Characteristics subject to change without notice
2 / 2
Datasheet epc3xx-LCCxx - V1.0
www.espros.ch
EPC [ ESPROS PHOTONICS CORP ]
