PBL 387 71
Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Temperature, Humidity
Storage temperature range
Operating temperature range
Operating junction temperature range, Note 1
T
Stg
T
Amb
T
J
-55
-40
-40
+150
+110
+140
°C
°C
°C
Power supply,
0°C
≤
T
Amb
≤
+70°C
V
CC
with respect to AGND
V
TB
with respect to AGND
V
TBat
with respect to A/BGND
V
Bat
with respect to BGND, continuous
V
CC
V
TB
V
TBat
V
Bat
-0.4
V
Bat
V
Bat
-85
6.5
0.4
0.4
0.4
V
V
V
V
Power dissipation
Continuous power dissipation at T
Amb
≤
+70 °C
Peak power dissipation @ T
Amb
= +70 °C, t < 100 ms, t
Rep
> 1 sec.
P
D
P
PD
1.5
4
W
W
Ground
Voltage between AGND and BGND
V
G
-5
V
CC
V
Digital inputs, outputs
(C1, C2, C3, DET)
Input voltage
Output voltage (DET not active)
Output current (DET)
V
ID
V
OD
I
OD
-0.4
-0.4
V
CC
V
CC
30
V
V
mA
Ring voltage, input
(VR)
Input voltage
V
R
-1.1
V
CC
V
TIPX and RINGX terminals,
0°C
≤
T
Amb
≤
+70°C, V
Bat
= -80 V
TIPX or RINGX current
TIPX or RINGX voltage, continuous (referenced to AGND)
TIPX or RINGX, pulse < 10 ms, t
Rep
> 10 s, Note 2, Note 3
TIPX or RINGX, pulse < 1 µs, t
Rep
> 10 s, Note 2, Note 3
TIP or RING, pulse < 250 ns, t
Rep
> 10 s, Note 2 , Note 3
I
TIPX
, I
RINGX
V
TA
, V
RA
V
TA
, V
RA
V
TA
, V
RA
V
TA
, V
RA
-100
V
Bat
V
Bat
–15
V
Bat
–20
V
Bat
–25
100
2
5
10
15
mA
V
V
V
V
Notes, Maximum Ratings
1. The circuit includes thermal protection. Operation above max. junction temperature may degrade device reliability.
2. With the diodes D
B
and D
TB
included, see figure 8.
3. R
F1
and R
F2
> 20
Ω
is also required. Pulse is supplied to RING and TIP outside R
F1
and R
F2
.
4. The voltage of V
TB
sets the maximum line length see figure 12. The diode D
TB
is required see figure 8.
Recommended Operating Condition
Parameter
Ambient temperature
V
CC
with respect to AGND
V
TB
with respect to A/BGND ,Note 4
V
Bat
with respect to BGND
Symbol
T
Amb
V
CC
V
TB
V
Bat
Min
-40
4.75
-32
-80
Max
+85
5.25
-10
Unit
°C
V
V
V
2
EN/LZT 146 135 R1A © Ericsson Microelectronics, December 2001
ERICSSON [ ERICSSON ]
