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PTB 20006
4 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20006 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz frequency
band. Rated at 4 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
4 Watts, 860–900 MHz
Class AB Characteristics
50% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
12
Output Power (Watts)
10
8
6
4
2
0
0.00
200
06
LOT
COD
E
V
CC
= 25 V
I
CQ
= 50 A
f = 900 MHz
0.15
0.30
0.45
0.60
0.75
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
1.7
35
0.2
–40 to +150
5.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
