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PTB 20007
30 Watts, 935–960 MHz
Cellular Radio RF Power Transistor
Description
The 20007 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation across the 935 to 960 MHz frequency
band. Rated at 30 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
30 Watts, 935–960 MHz
Class AB Characteristics
50% Collector Efficiency at 30 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
60
Output Power (Watts)
50
40
30
20
10
0
0
2
4
6
8
10
200
07
LOT
CO
DE
V
CC
= 24 V
I
CQ
= 200 mA
f = 960 MHz
Input Power (Watts)
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
10
175
1.0
–40 to +150
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
