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PTF10009 参数 Datasheet PDF下载

PTF10009图片预览
型号: PTF10009
PDF下载: 下载PDF文件 查看货源
内容描述: 85瓦, 1.0 GHz的GOLDMOS⑩场效应晶体管 [85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor]
分类和应用: 晶体射频场效应晶体管放大器局域网
文件页数/大小: 6 页 / 231 K
品牌: ERICSSON [ ERICSSON ]
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PTF 10009
Electrical Characteristics
Characteristic
(per side)
Conditions
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
e
(100% Tested—characteristics, conditions and limits shown per side)
Min
65
3.0
Typ
2.8
Max
1.0
5.0
Units
Volts
mA
Volts
Siemens
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 25 mA
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 3 A
Dynamic Characteristics
Characteristic
(per side)
Input Capacitance
(V
DS
= 28 V, V
GS
= 0 V, f = 1 MHz)
Output Capacitance
(V
DS
= 28 V, V
GS
= 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0 V, f = 1 MHz)
Symbol
C
iss
C
oss
C
rss
Min
Typ
90
36
1.9
Max
Units
pF
pF
pF
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, Pout = 85 W, I
DQ
= 600 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, Pout = 85 W, I
DQ
= 600 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, Pout = 85 W, I
DQ
= 600 mA, f = 960 MHz—
all phase angles at frequency of test)
Symbol
G
ps
h
Y
Min
12.0
47
Typ
13.0
50
Max
5:1
Units
dB
%
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
DD
= 28 V, Pout = 85 W, I
DQ
= 600 mA)
Z Source
D
Z Load
G
G
S
D
Frequency
MHz
860
900
960
1000
R
Z Source
W
jX
-0.78
-0.05
0.69
1.35
R
1.76
1.80
1.58
1.39
Z Load
W
jX
-1.50
-0.78
0.36
1.41
2
5.00
4.80
4.24
3.95
Z
0
= 50
W